VISHAY · FETs & Power MOSFETs · MPN SQJ418EP-T2_GE3
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
100V 48A 3.5V 68W 14mΩ@10V 1 N-channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS