VISHAY SQJ418EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ418EP-T1_BE3

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation68W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

100V 48A 3V 68W 14mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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