VISHAY · FETs & Power MOSFETs · MPN SQJ416EP-T1_GE3
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| Output Capacitance(Coss) | 400pF |
|---|---|
| Pd - Power Dissipation | 45W |
| Configuration | - |
| Gate Charge(Qg) | 20nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
45W 100V 27A 3.5V 22mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS