VISHAY SQJ415EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ415EP-T1_GE3

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Specifications

Gate Charge(Qg)95nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)248pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)320pF
Number1 P-Channel
Input Capacitance(Ciss)6nF
TypeP-Channel

Technical details

P-Channel 40V 30A 45W PowerPAKSO-8L

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