VISHAY SQJ415EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ415EP-T1_BE3

No reviews yet — be the first to review VISHAY SQJ415EP-T1_BE3.

Specifications

Drain to Source Voltage40V
Gate Charge(Qg)95nC@10V
Output Capacitance(Coss)6nF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)14mΩ@10V
Input Capacitance(Ciss)4.405nF
TypeP-Channel

Technical details

40V 30A 2.5V 45W 14mΩ@10V P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs