VISHAY · FETs & Power MOSFETs · MPN SQJ414EP-T1_GE3
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
N-Channel 30V 30A 45W PowerPAKSO-8L