VISHAY SQJ414EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ414EP-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)1.11nF

Technical details

30V 30A 2.5V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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