VISHAY · FETs & Power MOSFETs · MPN SQJ412EP-T2_GE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Output Capacitance(Coss) | 760pF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 5.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.95nF |
| Type | N-Channel |
40V 32A 2.5V 83W 5.2mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS