VISHAY · FETs & Power MOSFETs · MPN SQJ411EP-T1_GE3
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| Gate Charge(Qg) | 150nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 22W |
| RDS(on) | 5.8mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.6nF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.1nF |
12V 60A 600mV 22W 5.8mΩ@4.5V 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS