VISHAY · FETs & Power MOSFETs · MPN SQJ410EP-T1_GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Output Capacitance(Coss) | 1.01nF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 410pF |
| RDS(on) | 4.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.21nF |
| Type | N-Channel |
30V 32A 2.5V 27W 4.2mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS