VISHAY SQJ407EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ407EP-T1_GE3

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Specifications

Gate Charge(Qg)260nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)950pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)1.05nF
RDS(on)3.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.7nF
TypeP-Channel

Technical details

P-Channel 30V 56A 68W PowerPAKSO-8L

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