VISHAY SQJ407EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ407EP-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)260nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.05nF
RDS(on)4.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.7nF

Technical details

30V 60A 2V 4.4mΩ@10V 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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