VISHAY SQJ403EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ403EP-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)109nC@10V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)770pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.5nF
TypeP-Channel

Technical details

30V 30A 2.5V 68W 8.5mΩ@10V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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