VISHAY SQJ402EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ402EP-T1_GE3

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)903pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.286nF
TypeN-Channel

Technical details

N-Channel 100V 32A 83W Surface Mount PowerPAK-SO-8

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