VISHAY SQJ401EP-T2_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ401EP-T2_GE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)164nC@4.5V
Output Capacitance(Coss)4.76nF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)3.32nF
RDS(on)8mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)10.015nF
TypeP-Channel

Technical details

12V 32A 1.5V 83W 8mΩ@2.5V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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