VISHAY SQJ401EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ401EP-T1_GE3

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Specifications

Gate Charge(Qg)164nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)4.15nF
Number1 P-Channel
Input Capacitance(Ciss)10.015nF

Technical details

12V 32A 450mV 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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