VISHAY SQJ264EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ264EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)54A
Pd - Power Dissipation48W
RDS(on)20mΩ@10V
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)30pF
Number2 N-Channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)32nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.1nF

Technical details

54A 48W 20mΩ@10V 3.5V 2 N-Channel PowerPAK-SO-8-Dual FET, MOSFET Arrays RoHS

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