VISHAY · FETs & Power MOSFETs · MPN SQJ211ELP-T1_GE3
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.193nF |
| Current - Continuous Drain(Id) | 33.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 43.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.8nF |
| Type | P-Channel |
P-Channel 100V 33.6A 68W Surface Mount PowerPAK-SO-8