VISHAY SQJ208EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ208EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)60A
Pd - Power Dissipation48W
RDS(on)11.73mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)3.9nF
Gate Charge(Qg)75nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.25nF

Technical details

60A 48W 11.73mΩ@4.5V 2.4V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS

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