VISHAY · FETs & Power MOSFETs · MPN SQJ208EP-T1_GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 48W |
| RDS(on) | 11.73mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.9nF |
| Gate Charge(Qg) | 75nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 1.25nF |
60A 48W 11.73mΩ@4.5V 2.4V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS