VISHAY · FETs & Power MOSFETs · MPN SQJ202EP-T2_GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 48W |
| RDS(on) | 6.5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 12V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 855pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.525nF |
| Gate Charge(Qg) | 54nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 1.645nF |
60A 48W 6.5mΩ@10V 2V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS