VISHAY SQJ202EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ202EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)-
Pd - Power Dissipation9W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage12V
Reverse Transfer Capacitance (Crss@Vds)270pF
Number2 N-Channel
Input Capacitance(Ciss)777pF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

20A 9W 1.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS

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