VISHAY · FETs & Power MOSFETs · MPN SQJ186EP-T1_GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.942nF |
| Type | N-Channel |
80V 60A 3.5V 135W 15mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS