VISHAY SQJ186ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ186ELP-T1_GE3

No reviews yet — be the first to review VISHAY SQJ186ELP-T1_GE3.

Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)2.325nF

Technical details

80V 66A 2.5V 135W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs