VISHAY SQJ184EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ184EP-T1_GE3

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Specifications

Gate Charge(Qg)69nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)118A
Output Capacitance(Coss)1.441nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation234W
Reverse Transfer Capacitance (Crss@Vds)107pF
RDS(on)7.5mΩ@10V
Input Capacitance(Ciss)3.478nF
TypeN-Channel

Technical details

80V 118A 3.5V 234W 7.5mΩ@10V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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