VISHAY SQJ182EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ182EP-T1_GE3

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)874pF
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation395W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.392nF
TypeN-Channel

Technical details

N-Channel 80V 210A 395W PowerPAKSO-8L

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