VISHAY SQJ180EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ180EP-T1_GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)117nC@10V
Output Capacitance(Coss)1.14nF
Current - Continuous Drain(Id)248A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.645nF
TypeN-Channel

Technical details

N-Channel 80V 248A 500W PowerPAKSO-8L

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