VISHAY SQJ160EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ160EP-T1_GE3

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Specifications

Gate Charge(Qg)119nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.727nF
Current - Continuous Drain(Id)362A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.697nF
TypeN-Channel

Technical details

N-Channel 60V 362A 500W PowerPAKSO-8L

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