VISHAY SQJ152EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ152EP-T1_GE3

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)562pF
Current - Continuous Drain(Id)114A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.452nF
TypeN-Channel

Technical details

N-Channel 40V 114A 45W PowerPAKSO-8L

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