VISHAY SQJ152ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ152ELP-T1_GE3

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)577pF
Current - Continuous Drain(Id)123A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.633nF
TypeN-Channel

Technical details

40V 123A 2.2V 136W 7.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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