VISHAY · FETs & Power MOSFETs · MPN SQJ150EP-T1_GE3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 508pF |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.274nF |
| Type | N-Channel |
40V 66A 3.5V 65W 8.4mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS