VISHAY SQJ144EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ144EP-T1_GE3

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)665pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation148W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.96nF
TypeN-Channel

Technical details

40V 130A 3.5V 148W 4.6mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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