VISHAY · FETs & Power MOSFETs · MPN SQJ142ELP-T1_GE3
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.04nF |
| Current - Continuous Drain(Id) | 175A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.015nF |
| Type | N-Channel |
40V 175A 2.2V 190W 2.8mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS