VISHAY SQJ138EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ138EP-T1_GE3

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Specifications

Gate Charge(Qg)81nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.56nF
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.715nF
TypeN-Channel

Technical details

N-Channel 40V 330A 312W PowerPAKSO-8L

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