VISHAY SQJ138ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ138ELP-T1_GE3

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Specifications

Gate Charge(Qg)117nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.467nF
Current - Continuous Drain(Id)315A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)2.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.775nF
TypeN-Channel

Technical details

N-Channel 40V 315A 500W PowerPAKSO-8L

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