VISHAY SQJ128ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ128ELP-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)150nC@10V
Current - Continuous Drain(Id)437A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)1.66mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.315nF
TypeN-Channel

Technical details

30V 437A 2.2V 500W 1.66mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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