VISHAY SQJ126EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ126EP-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)152nC@10V
Output Capacitance(Coss)2.537nF
Current - Continuous Drain(Id)500A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)244pF
RDS(on)0.94mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.095nF
TypeN-Channel

Technical details

30V 500A 3.5V 500W 0.94mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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