VISHAY SQJ123ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ123ELP-T1_GE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)180nC@4.5V
Output Capacitance(Coss)4.443nF
Current - Continuous Drain(Id)238A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)3.982nF
RDS(on)6.4mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)11.68nF
TypeP-Channel

Technical details

P-Channel 12V 238A 375W Surface Mount PowerPAK-SO-8

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