VISHAY · FETs & Power MOSFETs · MPN SQD97N06-6M3L_GE3
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 97A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.06nF |
60V 97A 2.5V 136W 6.3mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS