VISHAY · FETs & Power MOSFETs · MPN SQD90P04_9M4LT4GE3
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 855pF |
| RDS(on) | 9.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.675nF |
40V 90A 1.5V 136W 9.4mΩ@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS