VISHAY SQD90P04-9m4L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD90P04-9m4L_GE3

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage40V
Output Capacitance(Coss)852pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)855pF
RDS(on)17.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.675nF

Technical details

40V 90A 2.5V 125W 17.8mΩ@10V 1 P-Channel P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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