VISHAY · FETs & Power MOSFETs · MPN SQD90P04-9m4L_GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 852pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 855pF |
| RDS(on) | 17.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.675nF |
40V 90A 2.5V 125W 17.8mΩ@10V 1 P-Channel P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS