VISHAY · FETs & Power MOSFETs · MPN SQD50P08-28-T4_GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 145nC@10V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 28mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.035nF |
| Type | P-Channel |
80V 48A 3.5V 136W 28mΩ@10V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS