VISHAY SQD50P08-28_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50P08-28_GE3

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Specifications

Gate Charge(Qg)145nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)28mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.035nF
TypeP-Channel

Technical details

P-Channel 80V 48A 136W Surface Mount TO-252

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