VISHAY SQD50P08-25L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50P08-25L_GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)137nC@10V
Output Capacitance(Coss)356pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.35nF
TypeP-Channel

Technical details

P-Channel 80V 50A 136W Surface Mount TO-252

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