VISHAY SQD50P06-15L_T4GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50P06-15L_T4GE3

No reviews yet — be the first to review VISHAY SQD50P06-15L_T4GE3.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)150nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)410pF
RDS(on)15.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.91nF

Technical details

60V 50A 1.5V 45W 15.5mΩ@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs