VISHAY SQD50P04-13L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50P04-13L_GE3

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)508pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)440pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.95nF
TypeP-Channel

Technical details

P-Channel 40V 50A 136W Surface Mount TO-252

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