VISHAY · FETs & Power MOSFETs · MPN SQD50P04-09L_T4GE3
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.065nF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 855pF |
| RDS(on) | 19mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.675nF |
| Type | P-Channel |
40V 50A 2.5V 45W 19mΩ@4.5V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS