VISHAY · FETs & Power MOSFETs · MPN SQD50P04-09L_GE3
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 852pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 7.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 855pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.675nF |
| Vgs | ±20V |
P-Channel 40V 50A Surface Mount TO-252