VISHAY · FETs & Power MOSFETs · MPN SQD50P03-07_GE3
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| Gate Charge(Qg) | 146nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.49nF |
30V 50A 2.5V 136W 7mΩ@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS