VISHAY · FETs & Power MOSFETs · MPN SQD50N04_4M5LT4GE3
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 670pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 4.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.86nF |
| Type | N-Channel |
40V 50A 2.5V 136W 4.2mΩ@4.5V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS