VISHAY SQD50N04-4M5L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50N04-4M5L_GE3

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.86nF

Technical details

N-Channel 40V 50A 136W Surface Mount TO-252

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